4H-N type SiC substrate
SiC crystal material has the advantages of large band-gap width, high breakdown electric field, high thermal conductivity, high electron saturation rate and strong radiation resistance. It is considered to be the most promising material for preparing high-frequency high-power devices, high-temperature electronic devices and microwave devices, and is widely used in the fields of new energy vehicle motor drive, charging pile, photovoltaic inverter, etc.
